• Chinese Journal of Quantum Electronics
  • Vol. 23, Issue 6, 876 (2006)
Wei CHANG*, Guang-han FAN, Chun-hua TAN, Shu-ti LI..., Yong LEI, Kun HUANG, Pin-qi ZHENG and Yu-bin CHEN|Show fewer author(s)
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    DOI: Cite this Article
    CHANG Wei, FAN Guang-han, TAN Chun-hua, LI Shu-ti, LEI Yong, HUANG Kun, ZHENG Pin-qi, CHEN Yu-bin. Effect of crystallization temperature in infilling of InP in SiO2 artificial opals[J]. Chinese Journal of Quantum Electronics, 2006, 23(6): 876 Copy Citation Text show less

    Abstract

    SiO2 artificial opal templates are fabricated,and metal organic chemical vapour deposition is used to infill the voids of prepared silica colloidal crystals with InP. The samples are characterized by scanning electron microscopy and UV-VIS spectroscopy. The results show that the crystallization temperature is an important factor in the infilling of InP. By the increasing of crystallization temperature,the infilling ratio of InP decreases.
    CHANG Wei, FAN Guang-han, TAN Chun-hua, LI Shu-ti, LEI Yong, HUANG Kun, ZHENG Pin-qi, CHEN Yu-bin. Effect of crystallization temperature in infilling of InP in SiO2 artificial opals[J]. Chinese Journal of Quantum Electronics, 2006, 23(6): 876
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