Simulation for intensity modulation of asymmetric Ge/SiGe coupled quantum wells

JIANG Peilin; ZHANG Yi; HUANG Qiang; SHI Haotian; HUANG Chukun; YU Linfeng; SUN Junqiang; YU Changliang

doi:10.3969/j.issn.1007-5461.2024.02.021

Journals >Chinese Journal of Quantum Electronics >Volume 41 >Issue 2 >Page 388 > Article

Chinese Journal of Quantum Electronics
Vol. 41, Issue 2, 388 (2024)

Simulation for intensity modulation of asymmetric Ge/SiGe coupled quantum wells

JIANG Peilin^1,*, ZHANG Yi¹, HUANG Qiang¹, SHI Haotian¹..., HUANG Chukun¹, YU Linfeng¹, SUN Junqiang¹ and YU Changliang²|Show fewer author(s)

Author Affiliations

¹Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China

²Wuhan Fisilink Microelectronics Technology Co., Ltd., Wuhan 430074, China

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DOI: 10.3969/j.issn.1007-5461.2024.02.021 Cite this Article

Peilin JIANG, Yi ZHANG, Qiang HUANG, Haotian SHI, Chukun HUANG, Linfeng YU, Junqiang SUN, Changliang YU. Simulation for intensity modulation of asymmetric Ge/SiGe coupled quantum wells[J]. Chinese Journal of Quantum Electronics, 2024, 41(2): 388 Copy Citation Text

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Fig. 1. Epitaxy design of the CQWs structure and schematic of the asymmetric Ge/SiGe CQW

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Wave functions at Γ point of the asymmetric Ge/SiGe CQW under different electric fields. (a) E = 0 kV/cm; (b) E = 10 kV/cm; (c) E = 20 kV/cm; (d) E = 30 kV/cm; (e) E = 40 kV/cm; (f) E = 50 kV/cm

Fig. 2. Wave functions at

Γ

point of the asymmetric Ge/SiGe CQW under different electric fields. (a) E = 0 kV/cm; (b) E = 10 kV/cm; (c) E = 20 kV/cm; (d) E = 30 kV/cm; (e) E = 40 kV/cm; (f) E = 50 kV/cm

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Fig. 3. Energy dispersion near

Γ

point of the asymmetric Ge/SiGe CQW

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Fig. 4. Transition energy at

Γ

point of the asymmetric Ge/SiGe CQW under different electric fields

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Fig. 5. Absorption spectrum of the asymmetric Ge/SiGe CQW under different electric fields for (a) TE and (b) TM polarization

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Fig. 6. Absorption spectrum of the Ge/SiGe uncouple quantum wells under different electric fields for (a) TE and (b) TM polarization

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Parameter	Symbol	Ge	Si
Lattice constant	a /nm	0.56579	0.54304
Refractive index	n_r	4.02	3.4
Elastic constant	C₁₁ / GPa	128.53	165.77
Elastic constant	C₁₂ / GPa	48.28	63.93
Deformation potential	a_c /eV	-10.41	-10.39
	a_L /eV	-1.54	-0.66
	a_v /eV	1.24	1.8
	b /eV	-2.9	-2.1
	d /eV	-5.28	-4.85
Spin-orbit split off energy	Δ / eV	0.289	0.044
Bandgap	E_Γ / eV	0.7985	4.185
Bandgap	E_L / eV	0.664	1.65
Average valence band energy	E_V / eV	-6.35	-7.03
Effective mass	m_c / m₀	0.038	0.528
	m_l / m₀	1.57	1.659
	m_h / m₀	0.0807	0.133
DKK parameter	L	-31.34	-6.69
	M	-5.9	-4.62
	N	-34.14	-8.56

Table 1. Parameters of Ge and Si used in the simulation^{[18, 19]}

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