• Laser & Optoelectronics Progress
  • Vol. 60, Issue 15, 1500004 (2023)
Dan Yang, Dengkui Wang*, Xuan Fang**, Dan Fang..., Li Yang, Chao Xiang, Jinhua Li and Xiaohua Wang|Show fewer author(s)
Author Affiliations
  • State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130022, Jinlin, China
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    DOI: 10.3788/LOP221857 Cite this Article Set citation alerts
    Dan Yang, Dengkui Wang, Xuan Fang, Dan Fang, Li Yang, Chao Xiang, Jinhua Li, Xiaohua Wang. Research Progress in Surface Modification Engineering and Application of PbSe Quantum Dots[J]. Laser & Optoelectronics Progress, 2023, 60(15): 1500004 Copy Citation Text show less
    Schematic diagram of electronic energy levels of quantum dots (QDs) and bulk materials
    Fig. 1. Schematic diagram of electronic energy levels of quantum dots (QDs) and bulk materials
    Surface modification and application of PbSe QDs
    Fig. 2. Surface modification and application of PbSe QDs
    Organic ligand exchange of PbSe QDs[32]. (a) Carrier mobility as a function of ligand length in bipolar PbSe QDs field effect transistors; (b), (c) first exciton absorption peaks of organic ligand-treated PbSe QDs films and coupling energies, electron mobilities, and optical band gaps of these films
    Fig. 3. Organic ligand exchange of PbSe QDs[32]. (a) Carrier mobility as a function of ligand length in bipolar PbSe QDs field effect transistors; (b), (c) first exciton absorption peaks of organic ligand-treated PbSe QDs films and coupling energies, electron mobilities, and optical band gaps of these films
    ALD treatment of PbSe QDs films terminated by short chain ligands. (a) Low temperature ALD fills PbSe QDs films with short chain ligands, short ligand replacement reduces barrier width between QDs, and inorganic matrix filling reduces barrier height and improves carrier mobility[43]; (b) field-effect electron mobility of filled PbSe QDs at 54 °C and 75 °C as a function of storage time in air[44]
    Fig. 4. ALD treatment of PbSe QDs films terminated by short chain ligands. (a) Low temperature ALD fills PbSe QDs films with short chain ligands, short ligand replacement reduces barrier width between QDs, and inorganic matrix filling reduces barrier height and improves carrier mobility[43]; (b) field-effect electron mobility of filled PbSe QDs at 54 °C and 75 °C as a function of storage time in air[44]
    PbSe QDs photodetector and its performance[21]. (a) Dark I-V characteristics of PbSe QDs photodetectors covered with different ligands; (b) BDT treatment of traps in passivated QDs films
    Fig. 5. PbSe QDs photodetector and its performance[21]. (a) Dark I-V characteristics of PbSe QDs photodetectors covered with different ligands; (b) BDT treatment of traps in passivated QDs films
    In situ passivation treatment of PbSe QDs[26]. Transmission electron microscope (TEM) images of PbSe QDs (a) untreated and (b) treated with NH4Cl, and inset is a high resolution TEM image; schematic diagram of absorption spectra of (c) untreated and (d) treated PbSe QDs with time
    Fig. 6. In situ passivation treatment of PbSe QDs[26]. Transmission electron microscope (TEM) images of PbSe QDs (a) untreated and (b) treated with NH4Cl, and inset is a high resolution TEM image; schematic diagram of absorption spectra of (c) untreated and (d) treated PbSe QDs with time
    PbSe/CdSe core shell heterostructure. (a) Photoluminescence (PL) spectra of aliquots during CdSe shell formation [60]; (b), (c) time dependent PL spectra of PbSe QDs and PbSe/CdSe[70]
    Fig. 7. PbSe/CdSe core shell heterostructure. (a) Photoluminescence (PL) spectra of aliquots during CdSe shell formation [60]; (b), (c) time dependent PL spectra of PbSe QDs and PbSe/CdSe[70]
    Preparation of PbSe QDs solar cells[82]. (a) Schematic diagram and cross-sectional scanning electron microscope (SEM) image of solar cell treated with mixed ligands; (b) J-V curve and corresponding parameters of solar cell
    Fig. 8. Preparation of PbSe QDs solar cells[82]. (a) Schematic diagram and cross-sectional scanning electron microscope (SEM) image of solar cell treated with mixed ligands; (b) J-V curve and corresponding parameters of solar cell
    PbSe photodetector[93]. (a) Schematic diagram of structure; (b) response and sensitivity
    Fig. 9. PbSe photodetector[93]. (a) Schematic diagram of structure; (b) response and sensitivity
    LigandCarrier mobility /(cm2·V-1·s-1Carrier lifetime /nsLigand length /(10-10 m)Reference
    1,2-ethanediamine(EDA)1.612.5About 3.835
    1,4-benzenediamine(BDA)0.38About 5.635
    Hydrazine0.95-0.973436
    1,2-ethanedithiol(EDT)0.07-0.2718.5About 4.23235
    1,6-hexanedithiol(HDT)7×10-4About 8.832
    Benzenedithiol(BDT)10-4-10-3About 6.43237
    Oxalic acid(OxAc)0.41<5.0About 3.535
    Formic acid(FoAc)(2.3±0.4)×10-233
    Acetic acid(AcAc)(6.3±0.3)×10-333
    Butanedioic acid(BuAc)0.04About 6.135
    Methoxide(MeO-0.3<7.52-33538
    Table 1. Effects of different ligands on properties of PbSe QDs
    MaterialFluorescence quantum yield /%Photostability or storage timeSynthesisReference
    PbSe/SnSe2.92-4 minSILAR68
    PbSe/SnS1.01-2 minSILAR68-69
    PbSe/CdSe81Several monthsCation exchange60
    PbSe/CdSe7011 dSILAR70
    PbSe/CdSe> 60Cation exchange61
    PbSe/PbS> 60200 minSILAR65
    PbSe/PbS55SILAR64
    PbSe/CdSe/ZnSe21 dSILAR62
    PbSe/CdSe/CdSe18Cation exchange +SILAR72
    PbSe/CdSe/ZnS48Cation exchange +SILAR60
    Table 2. Improvement of fluorescence quantum yield and stability of PbSe QDs by surface passivation technology
    YearQDs surface modificationOpen circuit voltage /VShort circuit current Jsc /(mA.cm-2Fill factor /%Power conversion efficiency /%Reference
    2013PbSe/PbS0.47517.3643.03.9383
    2014Cd2+,Cl-0.51723.4051.96.2080
    2014Zn2+,I-0.52824.0050.66.4787
    2015PbSe/PbS0.46011.8049.06.5084
    2015PbSe/CdSe0.36025.203.9386
    2015PbSe/CdSe0.43020.003.6085
    2016Cl-,I-0.43018.1045.43.5388
    2017CsPbBr30.53025.1061.58.207
    2018Cd2+,Cl-,I-0.50326.7058.87.9089
    2018CsPbBr0.5I1.50.56025.7064.09.2090
    2019Cd2+,Cl-,I-0.57328.1066.310.6881
    2019I-0.54028.4068.010.4091
    2021I-,Br-,Cd2+0.3476.7854.61.3182
    Table 3. Applications of PbSe QDs in solar cells
    Dan Yang, Dengkui Wang, Xuan Fang, Dan Fang, Li Yang, Chao Xiang, Jinhua Li, Xiaohua Wang. Research Progress in Surface Modification Engineering and Application of PbSe Quantum Dots[J]. Laser & Optoelectronics Progress, 2023, 60(15): 1500004
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