Dan Yang, Dengkui Wang, Xuan Fang, Dan Fang, Li Yang, Chao Xiang, Jinhua Li, Xiaohua Wang. Research Progress in Surface Modification Engineering and Application of PbSe Quantum Dots[J]. Laser & Optoelectronics Progress, 2023, 60(15): 1500004

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- Laser & Optoelectronics Progress
- Vol. 60, Issue 15, 1500004 (2023)

Fig. 1. Schematic diagram of electronic energy levels of quantum dots (QDs) and bulk materials

Fig. 2. Surface modification and application of PbSe QDs
![Organic ligand exchange of PbSe QDs[32]. (a) Carrier mobility as a function of ligand length in bipolar PbSe QDs field effect transistors; (b), (c) first exciton absorption peaks of organic ligand-treated PbSe QDs films and coupling energies, electron mobilities, and optical band gaps of these films](/Images/icon/loading.gif)
Fig. 3. Organic ligand exchange of PbSe QDs[32]. (a) Carrier mobility as a function of ligand length in bipolar PbSe QDs field effect transistors; (b), (c) first exciton absorption peaks of organic ligand-treated PbSe QDs films and coupling energies, electron mobilities, and optical band gaps of these films
![ALD treatment of PbSe QDs films terminated by short chain ligands. (a) Low temperature ALD fills PbSe QDs films with short chain ligands, short ligand replacement reduces barrier width between QDs, and inorganic matrix filling reduces barrier height and improves carrier mobility[43]; (b) field-effect electron mobility of filled PbSe QDs at 54 °C and 75 °C as a function of storage time in air[44]](/Images/icon/loading.gif)
Fig. 4. ALD treatment of PbSe QDs films terminated by short chain ligands. (a) Low temperature ALD fills PbSe QDs films with short chain ligands, short ligand replacement reduces barrier width between QDs, and inorganic matrix filling reduces barrier height and improves carrier mobility[43]; (b) field-effect electron mobility of filled PbSe QDs at 54 °C and 75 °C as a function of storage time in air[44]
![PbSe QDs photodetector and its performance[21]. (a) Dark I-V characteristics of PbSe QDs photodetectors covered with different ligands; (b) BDT treatment of traps in passivated QDs films](/Images/icon/loading.gif)
Fig. 5. PbSe QDs photodetector and its performance[21]. (a) Dark I-V characteristics of PbSe QDs photodetectors covered with different ligands; (b) BDT treatment of traps in passivated QDs films
![In situ passivation treatment of PbSe QDs[26]. Transmission electron microscope (TEM) images of PbSe QDs (a) untreated and (b) treated with NH4Cl, and inset is a high resolution TEM image; schematic diagram of absorption spectra of (c) untreated and (d) treated PbSe QDs with time](/Images/icon/loading.gif)
Fig. 6. In situ passivation treatment of PbSe QDs[26]. Transmission electron microscope (TEM) images of PbSe QDs (a) untreated and (b) treated with NH4Cl, and inset is a high resolution TEM image; schematic diagram of absorption spectra of (c) untreated and (d) treated PbSe QDs with time
![PbSe/CdSe core shell heterostructure. (a) Photoluminescence (PL) spectra of aliquots during CdSe shell formation [60]; (b), (c) time dependent PL spectra of PbSe QDs and PbSe/CdSe[70]](/Images/icon/loading.gif)
Fig. 7. PbSe/CdSe core shell heterostructure. (a) Photoluminescence (PL) spectra of aliquots during CdSe shell formation [60]; (b), (c) time dependent PL spectra of PbSe QDs and PbSe/CdSe[70]
![Preparation of PbSe QDs solar cells[82]. (a) Schematic diagram and cross-sectional scanning electron microscope (SEM) image of solar cell treated with mixed ligands; (b) J-V curve and corresponding parameters of solar cell](/Images/icon/loading.gif)
Fig. 8. Preparation of PbSe QDs solar cells[82]. (a) Schematic diagram and cross-sectional scanning electron microscope (SEM) image of solar cell treated with mixed ligands; (b) J-V curve and corresponding parameters of solar cell
![PbSe photodetector[93]. (a) Schematic diagram of structure; (b) response and sensitivity](/Images/icon/loading.gif)
Fig. 9. PbSe photodetector[93]. (a) Schematic diagram of structure; (b) response and sensitivity
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Table 1. Effects of different ligands on properties of PbSe QDs
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Table 2. Improvement of fluorescence quantum yield and stability of PbSe QDs by surface passivation technology
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Table 3. Applications of PbSe QDs in solar cells

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