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    Journals >Infrared and Laser Engineering >Volume 51 >Issue 12 >Page 20220141 > Article
    • Infrared and Laser Engineering
    • Vol. 51, Issue 12, 20220141 (2022)
    Study on proton implantation isolation of GaAs-based devices
    Mengya Zong1, Jingjing Dai1,*, Wei Li1, Congyang Wen2..., Tong Zhang1 and Zhiyong Wang1,2|Show fewer author(s)
    Author Affiliations
  • 1Department of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
  • 2Institute of Atomic and Molecular Science, Shaanxi University of Science & Technology, Xi’an 710021, China
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    DOI: 10.3788/IRLA20220141 Cite this Article
    Mengya Zong, Jingjing Dai, Wei Li, Congyang Wen, Tong Zhang, Zhiyong Wang. Study on proton implantation isolation of GaAs-based devices[J]. Infrared and Laser Engineering, 2022, 51(12): 20220141 Copy Citation Text show less
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    Mengya Zong, Jingjing Dai, Wei Li, Congyang Wen, Tong Zhang, Zhiyong Wang. Study on proton implantation isolation of GaAs-based devices[J]. Infrared and Laser Engineering, 2022, 51(12): 20220141
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