Superluminescent diode had important applications in OCT or light processing technology because of its wide and low ripple spectrum as well as incoherent light output. To satisfy the demand of wide and low ripple spectrum, the 1 550 nm AlGaInAs multi-quantum-well superluminescent diode was designed and manufactured. In this paper, tilt waveguide(12°) structure and isolation area were further adopted. Combined with the anti-reflect film, broad spectrum and low ripple superluminescent diode was obtained. Also, the influences of the isolation area on the device properties were compared. The experimental results show that the 3 dB spectral bandwidth of the superluminescent diode can reach around 83 nm with ripple as small as 0.1 dB, at the current of 200 mA, the output power is above 1.5 mW.