• Chinese Journal of Lasers
  • Vol. 52, Issue 5, 0501005 (2025)
Bing Xiong*, Mingwei Sun, Changzheng Sun, Zhibiao Hao..., Jian Wang, Lai Wang, Yanjun Han, Hongtao Li, Lin Gan and Yi Luo|Show fewer author(s)
Author Affiliations
  • Beijing National Research Centre for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
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    DOI: 10.3788/CJL241112 Cite this Article Set citation alerts
    Bing Xiong, Mingwei Sun, Changzheng Sun, Zhibiao Hao, Jian Wang, Lai Wang, Yanjun Han, Hongtao Li, Lin Gan, Yi Luo. Waveguide Uni‐Traveling Carrier Photodetectors with Wide Bandwidth and High Responsivity (Invited)[J]. Chinese Journal of Lasers, 2025, 52(5): 0501005 Copy Citation Text show less
    Schematics of waveguide photodetectors. (a) Simple side-illuminated waveguide photodetector; (b) evanescently coupled waveguide photodetector
    Fig. 1. Schematics of waveguide photodetectors. (a) Simple side-illuminated waveguide photodetector; (b) evanescently coupled waveguide photodetector
    Schematics of evanescently coupled waveguide photodetectors integrated with spot size converter structure. (a) Waveguide photodetector integrated with tapered spot size converter (length of tapered waveguide is shortened proportionally)[19]; (b) waveguide photodetector integrated with dual-stage tapered spot size converter[17]; (c) waveguide photodetector integrated with laterally tapered twin-waveguide structure[20]
    Fig. 2. Schematics of evanescently coupled waveguide photodetectors integrated with spot size converter structure. (a) Waveguide photodetector integrated with tapered spot size converter (length of tapered waveguide is shortened proportionally)[19]; (b) waveguide photodetector integrated with dual-stage tapered spot size converter[17]; (c) waveguide photodetector integrated with laterally tapered twin-waveguide structure[20]
    Waveguide photodetector integrated with vertically tapered converter. (a) Three-dimensional schematic[24]; (b) side view[20]
    Fig. 3. Waveguide photodetector integrated with vertically tapered converter. (a) Three-dimensional schematic[24]; (b) side view[20]
    Waveguide photodetector with short multimode waveguide and optical matching layer. (a) Schematic[26]; (b) responsivity versus passive waveguide length simulated by beam propagation method[25]
    Fig. 4. Waveguide photodetector with short multimode waveguide and optical matching layer. (a) Schematic[26]; (b) responsivity versus passive waveguide length simulated by beam propagation method[25]
    Dual-stage coupling structure. (a) Side and top views[29]; (b) epitaxial structure[28]
    Fig. 5. Dual-stage coupling structure. (a) Side and top views[29]; (b) epitaxial structure[28]
    Schematic of refractive index gradient structure and refractive index distribution of waveguide section
    Fig. 6. Schematic of refractive index gradient structure and refractive index distribution of waveguide section
    Waveguide photodetector with refractive index gradient structure. (a) Microscopic photograph; (b) frequency response test results of chips with different sizes
    Fig. 7. Waveguide photodetector with refractive index gradient structure. (a) Microscopic photograph; (b) frequency response test results of chips with different sizes
    Electron overshoot effect. (a) Velocity overshoot effect of electrons in InP material under different electric field intensities[34]; (b) Monte Carlo simulation results showing electron velocity versus transmission distance in InGaAsP (Q1.48) under different electric field intensities[30]
    Fig. 8. Electron overshoot effect. (a) Velocity overshoot effect of electrons in InP material under different electric field intensities[34]; (b) Monte Carlo simulation results showing electron velocity versus transmission distance in InGaAsP (Q1.48) under different electric field intensities[30]
    CPW with high impedance lines is used for better performance. (a) Improving output power at specific frequency range[37];
    Fig. 9. CPW with high impedance lines is used for better performance. (a) Improving output power at specific frequency range[37];
    Structures for reducing parasitic capacitance. (a) Air bridge[14]; (b) HSQ passivation[39]; (c) BCB passivation[35]
    Fig. 10. Structures for reducing parasitic capacitance. (a) Air bridge[14]; (b) HSQ passivation[39]; (c) BCB passivation[35]
    Microscope photographs of detector chips. (a) With on-chip bias-tee and matching resistors[41]; (b) with matching resistors[40]
    Fig. 11. Microscope photographs of detector chips. (a) With on-chip bias-tee and matching resistors[41]; (b) with matching resistors[40]
    Coaxial output modules. (a) UTC-PD module with 1 mm coaxial interface[43]; (b) photodetector packaging module with 0.8 mm coaxial interface[41]
    Fig. 12. Coaxial output modules. (a) UTC-PD module with 1 mm coaxial interface[43]; (b) photodetector packaging module with 0.8 mm coaxial interface[41]
    Design of waveguide output module. (a) Schematic diagram of photodetector with thin-film circuit[49]; (b) photo of fabricated module[50]
    Fig. 13. Design of waveguide output module. (a) Schematic diagram of photodetector with thin-film circuit[49]; (b) photo of fabricated module[50]
    Matching circuit. (a) Equivalent circuit of matching circuit[52]; (b) photodetector chip integrated with matching circuit[52]
    Fig. 14. Matching circuit. (a) Equivalent circuit of matching circuit[52]; (b) photodetector chip integrated with matching circuit[52]
    Integration of antennas and detectors. (a) Microscopic photograph of modified UTC-PD (MUTC-PD) integrated with E-plane conversion structure on single chip[53]; (b) optical wireless communication system [54]
    Fig. 15. Integration of antennas and detectors. (a) Microscopic photograph of modified UTC-PD (MUTC-PD) integrated with E-plane conversion structure on single chip[53]; (b) optical wireless communication system [54]
    Thin-film circuit. (a) Schematic diagram of thin-film circuit including on-chip bias tee and probe[56]; (b) internal layout of packaging module[55]
    Fig. 16. Thin-film circuit. (a) Schematic diagram of thin-film circuit including on-chip bias tee and probe[56]; (b) internal layout of packaging module[55]
    RF-choke structure based on CSRR and test results. (a) Schematic diagram; (b) spectral responses of module in W band under different photoelectric currents
    Fig. 17. RF-choke structure based on CSRR and test results. (a) Schematic diagram; (b) spectral responses of module in W band under different photoelectric currents
    Monolithic integration of patch antennas and photodiode chips. (a) SEM pictures of different patch antennas[58];
    Fig. 18. Monolithic integration of patch antennas and photodiode chips. (a) SEM pictures of different patch antennas[58];
    Structures based on end-fire antennas. (a) Schematic diagram of flip-chip connection between Vivaldi antenna on ALN substrate and photodetector[61]; (b) schematic diagram of tapered slot antenna prepared on high-frequency PCB board[62]; (c) schematic diagram of on-chip bias circuit, wideband Balun structure, and Vivaldi antenna (backside) prepared on quartz substrate
    Fig. 19. Structures based on end-fire antennas. (a) Schematic diagram of flip-chip connection between Vivaldi antenna on ALN substrate and photodetector[61]; (b) schematic diagram of tapered slot antenna prepared on high-frequency PCB board[62]; (c) schematic diagram of on-chip bias circuit, wideband Balun structure, and Vivaldi antenna (backside) prepared on quartz substrate
    Device typeBandwidth /GHz

    Responsivity /

    (A/W)

    Saturated powerCharacteristic
    WG-UTC-PD631700.27-9 dBm @ 200 GHzBeing integrated with CPW; without taper
    TW-UTC-PD161080.53Tapered mode converting; diluted waveguide
    WG-UTC-PD641150.15Periodic traveling-wave photodetector
    WG-UTC-PD141050.11.3 dBm @ 105 GHzAir bridge; high impedance CPW
    920.153.5 dBm @ 90 GHz
    WG-UTC-PD65750.5

    8.9 dBm @ 60 GHz

    5.1 dBm @ 120 GHz

    Spot-size converter
    WG-PIN-PD281200.51Planar multimode waveguide; parallel resistor
    WG-PIN-PD25481.07-5 dBm @ 40 GHzPlanar multimode waveguide
    WG-PIN-PD221000.66Ridge waveguide; being integrated with bias tee; parallel resistor
    WG-UTC-PD401100.6Planar multimode waveguide; parallel resistor
    WG-UTC-PD661000.6Being coupled directly to absorber
    WG-PD-taper67420.75Twin lateral taper coupler
    WG-UTC-PD29600.93.45 dBm @ 60 GHzDual-step coupled waveguide
    WG-UTC-PD362200.18-4.36 dBm @ 215 GHzBCB under CPW
    WG-UTC-PD681000.25Planar multimode waveguide
    WG-UTC-PD350.25

    -0.6 dBm @ 240 GHz

    -2.7 dBm @ 280 GHz

    Introducing specific cliff layers to improve output power
    WG-UTC-PD301530.38-5.6 dBm @ 130 GHzThick multi-layer coupling waveguide with gradually increasing refractive index profile
    1190.50-1.2 dBm @ 100 GHz
    870.53-2 dBm @ 100 GHz
    Table 1. Comparison of waveguide photodetector chip performance
    Packaging type

    Bandwidth /

    GHz

    Responsivity /

    (A/W)

    Saturated powerCharacteristic
    Coaxial69800.351 mm coaxial connector; being integrated with bias tee
    Coaxial431101 mm coaxial connector
    Coaxial70>1101 mm coaxial connector; bias free
    Coaxial411450.40.8 mm coaxial connector; being integrated with bias tee
    WR output4675‒1100.3510.4 dBm @ 100 GHzWR10
    WR output7175‒1100.4-8 dBm @ 100 GHzWR10
    WR output5590‒1400.072.3 dBm @ 100 GHzWR8
    WR output4790‒1400.412.3 dBm @ 120 GHzWR8
    WR output38110‒1700.40 dBm @150 GHzWR6
    WR output56140‒2200.07-7.8 dBm @ 140 GHzWR5
    WR output53220‒3200.07-12.4 dBm @ 300 GHzWR3
    WR output72220‒3250.27-8.7 dBm @ 264 GHzWR3
    WR output50220‒3250.22-2.7 dBm @ 350 GHzWR3
    WR output73400‒900-19 dBm @ 500 GHzWR1.5
    Antenna74300‒25000.2-20 dBm @ 300 GHzBow-tie antenna
    Antenna57700‒16000.02-19.6 dBm @ 1.04 THzTwin-dipole planar antenna
    Antenna75150‒15000.03-25.8 dBm @ 1.04 THzLog-periodic toothed planar antenna
    Antenna76

    350‒850

    900‒1600

    0.2

    -24.5 dBm @ 1.25 THz

    -25.5 dBm @ 700 GHz

    Slot antenna
    Antenna7770‒1900.144-5.8 dBm @ 74 GHzBow-tie antenna
    Antenna78100‒500

    0.105

    0.09

    Resonant slot antenna

    Log-periodic antenna

    Antenna6075‒110-1.5 dBm EIRPVivaldi antenna
    Table 2. Comparison of detector package performance
    Bing Xiong, Mingwei Sun, Changzheng Sun, Zhibiao Hao, Jian Wang, Lai Wang, Yanjun Han, Hongtao Li, Lin Gan, Yi Luo. Waveguide Uni‐Traveling Carrier Photodetectors with Wide Bandwidth and High Responsivity (Invited)[J]. Chinese Journal of Lasers, 2025, 52(5): 0501005
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