Dengyao Guo, Xiaoyan Tang, Qingwen Song, Yu Zhou, Jingkai Guo, Lejia Sun, Hao Yuan, Fengyu Du, Yuming Zhang. Power pulse sharpening technology based on silicon carbide plasma devices[J]. High Power Laser and Particle Beams, 2024, 36(1): 013008
- High Power Laser and Particle Beams
- Vol. 36, Issue 1, 013008 (2024)
Fig. 1. Structure diagram and breakdown characteristics of DSRD and DAS in the simulation
Fig. 2. DSRD based pulse sharpening circuit (red and blue frames are not connected simultaneously)
Fig. 3. Pulse sharpening circuit based on DSRD and DAS (red and green frames are not connected simultaneously)
Fig. 4. Changes of some key physical quantities during DSRD shutdown, where t 1=66.39 ns; t 2 = 67.54 ns;t 3 = 67.84 ns
Fig. 5. Changes of some key physical quantities during DAS triggering, where t 1=67.514 ns; t 2=67.823 ns; t 3=67.858 ns; t 4=68.006 ns
Fig. 6. Output pulse of silicon carbide DAS under different circuit conditions in the experiment
Fig. 7. Sharpening effect of silicon carbide plasma pulse power devices on electrical pulses
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Table 1. Circuit component parameters used for simulation
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