• Infrared and Laser Engineering
  • Vol. 52, Issue 2, 20220371 (2023)
Yanyan Zhan1, Bingxue Li1, Hao Yan1, Xuan Fang1,2..., Dengkui Wang1, Dan Fang1, Xueying Chu1, Yingjiao Zhai1, Jinhua Li1 and Xiaohua Wang1|Show fewer author(s)
Author Affiliations
  • 1School of Physics, State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130000, China
  • 2School of Science and Engineering, the Chinese University of Hong Kong (Shenzhen), Shenzhen 518172, China
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    DOI: 10.3788/IRLA20220371 Cite this Article
    Yanyan Zhan, Bingxue Li, Hao Yan, Xuan Fang, Dengkui Wang, Dan Fang, Xueying Chu, Yingjiao Zhai, Jinhua Li, Xiaohua Wang. Progress in growth control and applications of optoelectronic devices of bismuthene[J]. Infrared and Laser Engineering, 2023, 52(2): 20220371 Copy Citation Text show less
    Schematic illustration of theoretical predictions, preparation methods and applications of bismuthene[22, 44-45,47,50-51]
    Fig. 1. Schematic illustration of theoretical predictions, preparation methods and applications of bismuthene[22, 44-45,47,50-51]
    [in Chinese]
    Fig. 1. [in Chinese]
    (a) Top view of five honeycomb structures and four non-honeycomb structures of monolayer bismuthene[37]; (b) Top and side views of α-bismuthene and (c) β-bismuthene[22]
    Fig. 2. (a) Top view of five honeycomb structures and four non-honeycomb structures of monolayer bismuthene[37]; (b) Top and side views of α-bismuthene and (c) β-bismuthene[22]
    Preparation methods of bismuthene[ 44-45,47,50-51]
    Fig. 3. Preparation methods of bismuthene[ 44-45,47,50-51]
    (a) Schematic illustration of physical vapor deposition (PVD); (b) LEED of 1T-TaS2; (c) LEED of Bi(111) film[61]; (d) Sketch of bismuthene on the SiC(0001); (e) STM overview map; (f) Substrate step height profile[50]
    Fig. 4. (a) Schematic illustration of physical vapor deposition (PVD); (b) LEED of 1T-TaS2; (c) LEED of Bi(111) film[61]; (d) Sketch of bismuthene on the SiC(0001); (e) STM overview map; (f) Substrate step height profile[50]
    (a) Optical photographs of thin film samples grown on SiO2 and Al2O3; (b) TEM image; (c), (d) HRTEM images; (e) The schematic of FETs based on Bi film[51]
    Fig. 5. (a) Optical photographs of thin film samples grown on SiO2 and Al2O3; (b) TEM image; (c), (d) HRTEM images; (e) The schematic of FETs based on Bi film[51]
    Summary of "top-down" methods for preparing bismuthene[44-45,47,63]
    Fig. 6. Summary of "top-down" methods for preparing bismuthene[44-45,47,63]
    (a) Schematic illustration of liquid phase exfoliation; (b) HRTEM image; (c) SEM image; (d) AFM image; (e) Schematic of mode-locked fiber laser with a microfiber-based bismuthene SA[44]
    Fig. 7. (a) Schematic illustration of liquid phase exfoliation; (b) HRTEM image; (c) SEM image; (d) AFM image; (e) Schematic of mode-locked fiber laser with a microfiber-based bismuthene SA[44]
    (a) Schematic illustration of preparing bismuthene of acid intercalation; (b) SEM image of bulk bismuth. (c) SEM image of H2SO4-intercalated bismuth powder; (d) SEM image of bismuth nanosheets[45,64]
    Fig. 8. (a) Schematic illustration of preparing bismuthene of acid intercalation; (b) SEM image of bulk bismuth. (c) SEM image of H2SO4-intercalated bismuth powder; (d) SEM image of bismuth nanosheets[45,64]
    (a) Bismuthene subcarbonate crystal structure; (b) Schematic illustration of electrochemical exfoliation; (c) TEM image; (d) HRTEM image; (e) SEAD pattern[46]
    Fig. 9. (a) Bismuthene subcarbonate crystal structure; (b) Schematic illustration of electrochemical exfoliation; (c) TEM image; (d) HRTEM image; (e) SEAD pattern[46]
    (a) and (b) Schematic illustration of electrochemical exfoliation; (c) SEM image; (d) EDS map; (e) AFM image; (f) TEM image; (g) HRTEM image; (h) EDS map[47,65]
    Fig. 10. (a) and (b) Schematic illustration of electrochemical exfoliation; (c) SEM image; (d) EDS map; (e) AFM image; (f) TEM image; (g) HRTEM image; (h) EDS map[47,65]
    (a) XRD patterns; (b) TEM image; (c) HRTEM image; (d) SAED pattern; (e) AFM image; (f) The corresponding height profiles[63]
    Fig. 11. (a) XRD patterns; (b) TEM image; (c) HRTEM image; (d) SAED pattern; (e) AFM image; (f) The corresponding height profiles[63]
    (a) Schematic of modelocked 2 μm Tm-doped fiber laser with the as-fabricated bismuthene SA; (b) Laser pulse train; (c) Single pulse [45]
    Fig. 12. (a) Schematic of modelocked 2 μm Tm-doped fiber laser with the as-fabricated bismuthene SA; (b) Laser pulse train; (c) Single pulse [45]
    Open aperture Z–scan transmission[48]
    Fig. 13. Open aperture Z–scan transmission[48]
    2D materialPBEHSEReference
    αbismuthene 0.16 (I)0.36 (D)[56]
    0.16 (I) 0.17 (SOC-I) 0.14 (D) 0.03 (SOC-D) [42]
    0.49 (I)0.99 (D)[38]
    βbismuthene 0.55 (I) 0.51 (SOC-I) 0.80 (D) 0.32(SOC-D) [42]
    0.56 (I) 0.50(SOC-I) [57]
    Table 1. Band gap value of single layer α and β-bismuthene (in eV, direct band gap is D, indirect band gap is I)
    2D materialIntercalation agentSolution Voltage/V Number of layersReference
    Bismuth nanosheets-Isopropanol solution-Few[43]
    Bismuth nanosheets-NMP solution-Few[44]
    Bismuth nanosheetsHSO4 SO4−2Water--[45]
    Bismuth carbonate nanosheets0.5M Na2CO3Water10Few[46]
    BismutheneTPA+DMF solution151-6[47]
    BismutheneNa+Water-Few[63]
    BismutheneTPA+Acetonitrile solution10Few[39]
    Bismuthene0.2M Na2SO4Water−10/−6Few[48]
    Table 2. Summary of bismuth alkene stripping under different stripping conditions
    Yanyan Zhan, Bingxue Li, Hao Yan, Xuan Fang, Dengkui Wang, Dan Fang, Xueying Chu, Yingjiao Zhai, Jinhua Li, Xiaohua Wang. Progress in growth control and applications of optoelectronic devices of bismuthene[J]. Infrared and Laser Engineering, 2023, 52(2): 20220371
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