• Chinese Journal of Quantum Electronics
  • Vol. 41, Issue 2, 378 (2024)
CHEN Anmin1,2,3,*, MA Feiyun2, CUI Lingjiang2, ZHANG Peng1,2, and WANG Chuanjie1,2
Author Affiliations
  • 1Weihai Optical Fiber Preform Engineering Research Center, Weihai Changhe Optical Technology Co. Ltd., Weihai 264200, China
  • 2School of Materials Science and Engineering, Harbin Institute of Technology at Weihai, Weihai 264209, China
  • 3Department of Technology, Hongan Group Co. Ltd., Weihai 264200, China
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    DOI: 10.3969/j.issn.1007-5461.2024.02.020 Cite this Article
    Anmin CHEN, Feiyun MA, Lingjiang CUI, Peng ZHANG, Chuanjie WANG. Thermal stability of WO3 doped tellurite glass and spectral properties of Er3+/Yb3+ doped tellurium⁃tungstate glass[J]. Chinese Journal of Quantum Electronics, 2024, 41(2): 378 Copy Citation Text show less

    Abstract

    In order to obtain the tellurite glass with good thermal stability and high-intensity luminescence, WO3 is doped into the TeO2-ZnO-Na2O system to improve the anti-devitrification and thermal stability of the glass. The results show that the ΔT of the tellurite glass increases from 110 °C without WO3 to 142 °C with WO3 content of 20 mol%. On the basis of thermal stability study of tellurite glass, the spectral properties of single-doped Er3+ and Er3+/Yb3+ co-doped tellurium tungstate glasses are further studied. The research results show that under the co-doping conditions of Er3+/Yb3+, the energy transfer between Er3+/Yb3+ improves the absorption efficiency of Er3+ ions for 980 nm pump light, and the luminescence intensity in the 1.5 μm band is enhanced. Finally, Er3+/Yb3+ co-doped tellurium- tungstic glass with high-intensity 1.5 μm band emission is obtained, indicating that the co-doping of Er3+/Yb3+ is an effective method to achieve high-intensity luminescence in the 1.5 μm band.
    Anmin CHEN, Feiyun MA, Lingjiang CUI, Peng ZHANG, Chuanjie WANG. Thermal stability of WO3 doped tellurite glass and spectral properties of Er3+/Yb3+ doped tellurium⁃tungstate glass[J]. Chinese Journal of Quantum Electronics, 2024, 41(2): 378
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