Ferroelectrically modulate the Fermi level of graphene oxide to enhance SERS response

Mingrui Shao; Chang Ji; Jibing Tan; Baoqiang Du; Xiaofei Zhao; Jing Yu; Baoyuan Man; Kaichen Xu; Chao Zhang; Zhen Li

doi:10.29026/oea.2023.230094

Journals >Opto-Electronic Advances >Volume 6 >Issue 11 >Page 230094 > Article

Opto-Electronic Advances
Vol. 6, Issue 11, 230094 (2023)

Ferroelectrically modulate the Fermi level of graphene oxide to enhance SERS response

Mingrui Shao¹, Chang Ji¹, Jibing Tan¹, Baoqiang Du¹..., Xiaofei Zhao¹, Jing Yu¹, Baoyuan Man¹, Kaichen Xu^2,*, Chao Zhang^1,** and Zhen Li^1,***|Show fewer author(s)

Author Affiliations

¹Institute of Materials and Clean Energy, School of Physics and Electronics, Shandong Normal University, Jinan 250014, China

²State Key Laboratory of Fluid Power and Mechatronic Systems, School of Mechanical Engineering, Zhejiang University, Hangzhou 310030, China

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DOI: 10.29026/oea.2023.230094 Cite this Article

Mingrui Shao, Chang Ji, Jibing Tan, Baoqiang Du, Xiaofei Zhao, Jing Yu, Baoyuan Man, Kaichen Xu, Chao Zhang, Zhen Li. Ferroelectrically modulate the Fermi level of graphene oxide to enhance SERS response[J]. Opto-Electronic Advances, 2023, 6(11): 230094 Copy Citation Text

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