In order to improve the characteristics of the general broad-waveguide 808-nm semiconductor laser diode (LD), we design a new type quantum well LD with an asymmetric cladding structure. The structure is grown by metal organic chemical vapor deposition (MOCVD). For the devices with 100-\mum-wide stripe and 1000-\mum-long cavity under continuous-wave (CW) operation condition, the typical threshold current is 190 mA, the slope efficiency is 1.31 W/A, the wall-plug efficiency reaches 63%, and the maximum output power reaches higher than 7 W. And the internal absorption value decreases to 1.5 cm^{-1}.