MOCVD growth of AlGaInP/GaInP quantum well laser diode with asymmetric cladding structure for high power applications

Peixu Li; Ling Wang; Shuqiang Li; Wei Xia; Xin Zhang; Qingmin Tang; Zhongxiang Ren; Xiangang Xu

doi:10.3788/COL20090706.0489

Journals >Chinese Optics Letters >Volume 7 >Issue 6 >Page 06489 > Article

Chinese Optics Letters
Vol. 7, Issue 6, 06489 (2009)

MOCVD growth of AlGaInP/GaInP quantum well laser diode with asymmetric cladding structure for high power applications

Peixu Li, Ling Wang, Shuqiang Li, Wei Xia..., Xin Zhang, Qingmin Tang, Zhongxiang Ren and Xiangang Xu|Show fewer author(s)

Author Affiliations

State Key Lab of Crystal Materials, Shandong University, Ji'nan 250100, China

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DOI: 10.3788/COL20090706.0489 Cite this Article Set citation alerts

Peixu Li, Ling Wang, Shuqiang Li, Wei Xia, Xin Zhang, Qingmin Tang, Zhongxiang Ren, Xiangang Xu, "MOCVD growth of AlGaInP/GaInP quantum well laser diode with asymmetric cladding structure for high power applications," Chin. Opt. Lett. 7, 06489 (2009) Copy Citation Text

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