• Journal of Advanced Dielectrics
  • Vol. 14, Issue 6, 2440013 (2024)
Junbo Guo1, Xiangpeng Wang2, Yang Song1, Leijun Yao1..., Chuanshi Min3, Xiao Li4, Fanshuo Wang4 and Yuanming Lai4,*|Show fewer author(s)
Author Affiliations
  • 1China Anneng Group Third Engineering Bureau Co.,Ltd.,Chengdu 610036,P. R. China
  • 2Key Laboratory of Earth Exploration and Information Technology of Ministry of Education,Chengdu University of Technology,Chengdu 610059,P. R. China
  • 3Ya’an Zhengxing White Marble Co.,Ltd.,Ya’an 625701,P. R. China
  • 4School of Mechanical and Electrical Engineering,Chengdu University of Technology,Chengdu 610059,P. R. China
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    DOI: 10.1142/S2010135X24400137 Cite this Article
    Junbo Guo, Xiangpeng Wang, Yang Song, Leijun Yao, Chuanshi Min, Xiao Li, Fanshuo Wang, Yuanming Lai. Influence of Sn4+ substitution for Si4+ on the microwave dielectric properties of Mg2Al4Si5xSnxO18 ceramics[J]. Journal of Advanced Dielectrics, 2024, 14(6): 2440013 Copy Citation Text show less

    Abstract

    The Mg2Al4Si5xSnxO18 (0x0.20) ceramics were successfully synthesized via the solid-state reaction method. The XRD results show that the main phase of the ceramics is Mg2Al4Si5O18. When x=0,there is a second phase of Al2SiO5. With the increase of x,the content of Sn2+ gradually increased,the Al2SiO5 phase disappeared,and the SnO2 and MgAl2O4 phases appeared. In addition,the cell volume of the ceramic changes with the increase of x,which indicates that partial Sn2+ successfully enters the lattice with ion substitution and lattice distortion. The relative density and εr are highly correlated. The quality factor (Qf) is not only affected by the relative density but also by the symmetry of the [Si4Al2] ring. The bond strength as an evaluation of the stability of the crystal structure determines the magnitude of τf. Good microwave dielectric properties were achieved for samples at x=0.04 with sintering at 1400C: εr=4.86,Qf=17,000GHz and τf=32ppm/C,demonstrating that Mg2Al4Si4.96Sn0.04O18 ceramics are an ideal candidate for microwave electronics.
    Junbo Guo, Xiangpeng Wang, Yang Song, Leijun Yao, Chuanshi Min, Xiao Li, Fanshuo Wang, Yuanming Lai. Influence of Sn4+ substitution for Si4+ on the microwave dielectric properties of Mg2Al4Si5xSnxO18 ceramics[J]. Journal of Advanced Dielectrics, 2024, 14(6): 2440013
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