• Semiconductor Optoelectronics
  • Vol. 45, Issue 2, 181 (2024)
MA Yong1, XU Yingsong1, SHENG Hongyuan1, CHEN Xin1..., LI Renpu1, CHEN Qianbin1, ZHOU Xingye2, CHEN Qin3, Anthony Vickers1,4, Jehan Akbar5 and MA Xiaoyu6|Show fewer author(s)
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • 4[in Chinese]
  • 5[in Chinese]
  • 6[in Chinese]
  • show less
    DOI: 10.16818/j.issn1001-5868.2023121201 Cite this Article
    MA Yong, XU Yingsong, SHENG Hongyuan, CHEN Xin, LI Renpu, CHEN Qianbin, ZHOU Xingye, CHEN Qin, Anthony Vickers, Jehan Akbar, MA Xiaoyu. THz-Metasurface Device with Multiple Resonance Modes[J]. Semiconductor Optoelectronics, 2024, 45(2): 181 Copy Citation Text show less

    Abstract

    An all-in-one design is presented for a polarization-insensitive metasurface with a centrally symmetric split-ring structure for generating various resonant modes. The types of resonant modes (LC, dipole, and higher order resonances) are identified and analyzed by investigating their spectroscopic properties theoretically and experimentally. Several higher-order resonant modes have significantly higher quality factors, Q (~230). These resonant modes are also highly sensitive to the dielectric properties of the surrounding material of the metasurface.Additionally, the EM properties of metasurfaces with asymmetric structures were also investigated. It was found that additional resonant modes at both 0.332 and 0.210THz could be excited and strengthened by increasing the asymmetry of the metasurface structure along the horizontal (x-axis) and vertical axes (y-axis).
    MA Yong, XU Yingsong, SHENG Hongyuan, CHEN Xin, LI Renpu, CHEN Qianbin, ZHOU Xingye, CHEN Qin, Anthony Vickers, Jehan Akbar, MA Xiaoyu. THz-Metasurface Device with Multiple Resonance Modes[J]. Semiconductor Optoelectronics, 2024, 45(2): 181
    Download Citation