Based on the established laser thermal conduction model and photoelectric conversion physical model of single-junction GaAs solar cells, the effects of pulse laser irradiation temperature and photoelectric conversion on single-junction GaAs solar cells were simulated and studied. Two different types, 532 nm and 808 nm, were studied. Under different irradiation energy and incident angle, the solar cell temperature, voltage-current characteristics, photoelectric conversion efficiency and other properties were changed by the pulsed laser with different wavelengths. The simulation results show that the smaller the angle between the incident laser and the normal direction of the solar cell, the greater the electric power ofthe solar cell output under the same laser irradiation intensity, 532 nm and 808 nm wavelength lasers have little difference in temperature caused by GaAs battery irradiation. 808 nm wavelength laser has a larger absorption coefficient for GaAs materials than 532 nm wavelength laser. Solar cells can absorb more energy and have a higher response. Single-junction GaAs cells irradiated with 808 nm wavelength laser can output more electrical power and bring greater photoelectric conversion efficiency.