In this paper, a hole-triggered Si avalanche detector (APD) was prepared based on CMOS process. And the breakdown effect model of the hole-triggered avalanche device was established based on the breakdown characteristics of the device at different operating temperatures. Based on the avalanche breakdown model and the breakdown voltage test results, the parameter of breakdown electric field versus temperature (dE/dT) was obtained by fitting the curve. The breakdown voltage and temperature are positive temperature coefficients at 250~320 K. And the device undergoes avalanche breakdown dominated by dV/dT=23.3 mV/K. The value is determined by the width of the multiplication region as well as the carrier collision ionization coefficient. At 50~140 K operating temperature, the breakdown voltage is a negative temperature coefficient and the device undergoes tunnel breakdown with dV/dT=-58.2 mV/K. The value is mainly influenced by both the spatial extension of the electric field in the avalanche region and the peak electric field.