Y₁Ba₂Cu₃O_7-xsemiconductive thin film with different buffers is manufactured by current magnetic sputtering with direct and annealing method, and their IR thermal radialization responses are studied. The microstructure of Y₁Ba₂Cu₃O_7-x thin film is analyzed by XRD and Raman spectrum. The electronic resistance temperature coefficient value and hall effect of Y₁Ba₂Cu₃O_7-x film are measured. The results show that the uniformity of the semiconductive Y₁Ba₂Cu₃O_7-x thin films with buffer layer is better and their signaltonoise ratio is higher. Y₁Ba₂Cu₃O_7-x has good speciality for its thermal radiation response in IR band and has good performance in submillimeter band, even in millimeter band. It will become new sensor elements of IR bolometer working at room temperature