Fabrication of low Mg content MgxZn1-xO nanowires ultraviolet photosensors via chemical vapour deposition method

Yu Fan; Qianqian Yuan; Haitao Jiang

doi:10.3788/IRLA20200448

Journals >Infrared and Laser Engineering >Volume 50 >Issue 9 >Page 20200448 > Article

Infrared and Laser Engineering
Vol. 50, Issue 9, 20200448 (2021)

Fabrication of low Mg content Mg_xZn_1-xO nanowires ultraviolet photosensors via chemical vapour deposition method

Yu Fan¹, Qianqian Yuan², and Haitao Jiang²

Author Affiliations

¹School of Network Engineering, Zhoukou Normal University, Zhoukou 466001, China

²Jiaozuo Teacher's College, Jiaozuo 454001, China

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DOI: 10.3788/IRLA20200448 Cite this Article

Yu Fan, Qianqian Yuan, Haitao Jiang. Fabrication of low Mg content Mg_xZn_1-xO nanowires ultraviolet photosensors via chemical vapour deposition method[J]. Infrared and Laser Engineering, 2021, 50(9): 20200448 Copy Citation Text

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(a) Top-view SEM images of the as-grown MgZnO NWs; (b) EDS image of MgZnO NWs; (c) Single morphology of MgZnO NW sample for TEM; (d) High resolution TEM of the MgZnO nanowire, insert images show the corresponding SAED pattern, respectively

Fig. 1. (a) Top-view SEM images of the as-grown MgZnO NWs; (b) EDS image of MgZnO NWs; (c) Single morphology of MgZnO NW sample for TEM; (d) High resolution TEM of the MgZnO nanowire, insert images show the corresponding SAED pattern, respectively

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Fig. 2. (a) XRD of the ZnO nanowires and MgZnO nanowire; (b) PL spectrum of the ZnO nanowires and MgZnO nanowire. The PL shows the peak of MgZnO blue shift

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Fig. 3. I-V characteristics of the ZnO NWs photodetectors (a) and ZnO-GQDs NWs photodetectors (b); I-T characteristics of the ZnO NWs photodetectors (c) and ZnO-GQDs NWs photodetectors (d)

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