• Photonics Research
  • Vol. 8, Issue 12, 1910 (2020)
Jintian Lin1, Fang Bo2,5,*, Ya Cheng1,3,4,6,*, and Jingjun Xu2,7,*
Author Affiliations
  • 1State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China
  • 2The MOE Key Laboratory of Weak Light Nonlinear Photonics, TEDA Applied Physics Institute and School of Physics, Nankai University, Tianjin 300457, China
  • 3XXL—The Extreme Optoelectromechanics Laboratory, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
  • 4Collaborative Innovation Center of Light Manipulations and Applications, Shandong Normal University, Jinan 250358, China
  • 5e-mail: bofang@nankai.edu.cn
  • 6e-mail: ycheng@phys.ecnu.edu.cn
  • 7e-mail: jjxu@nankai.edu.cn
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    DOI: 10.1364/PRJ.395305 Cite this Article Set citation alerts
    Jintian Lin, Fang Bo, Ya Cheng, Jingjun Xu, "Advances in on-chip photonic devices based on lithium niobate on insulator," Photonics Res. 8, 1910 (2020) Copy Citation Text show less
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    Jintian Lin, Fang Bo, Ya Cheng, Jingjun Xu, "Advances in on-chip photonic devices based on lithium niobate on insulator," Photonics Res. 8, 1910 (2020)
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