• Semiconductor Optoelectronics
  • Vol. 42, Issue 6, 844 (2021)
MENG Fankai, CHEN Zhaojun, JIANG Fan, and XU Chenxin
Author Affiliations
  • [in Chinese]
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    DOI: 10.16818/j.issn1001-5868.2021090105 Cite this Article
    MENG Fankai, CHEN Zhaojun, JIANG Fan, XU Chenxin. Effect of Preparation Process on Properties of New Semiconductor Thermoelectric Materials[J]. Semiconductor Optoelectronics, 2021, 42(6): 844 Copy Citation Text show less
    References

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    [9] Wang L, Li J, Zhang C, et al. Discovery of low-temperature GeTe-based thermoelectric alloys with high performance competing with Bi2Te3[J]. J. of Materials Chemistry A, 2020, 8(4): 1660-1667.

    [10] Soleimani Z, Zoras S, Ceranic B, et al. A review on recent developments of thermoelectric materials for room-temperature applications[J]. Sustainable Energy Technologies and Assessments, 2020, 37: 100604.

    [11] Chen Z, Han G, Yang L, et al. Nanostructured thermoelectric materials: Current research and future challenge[J]. Progress in Natural Science: Materials International, 2012, 22(6): 535-549.

    [13] Li J, Yu P, Wu C, et al. Processing of advanced thermoelectric materials[J]. Science China(Technological Sciences), 2017, 60(9): 1347-1364.

    [14] Kim S I, Lee K H, Mun H A, et al. Dense dislocation arrays embedded in grain boundaries for high-performance bulk thermoelectrics[J]. Science, 2015, 348(6230): 109-114.

    MENG Fankai, CHEN Zhaojun, JIANG Fan, XU Chenxin. Effect of Preparation Process on Properties of New Semiconductor Thermoelectric Materials[J]. Semiconductor Optoelectronics, 2021, 42(6): 844
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