Research progress of 2 μm Ho single-doped solid laser and application of ZnGeP2 on middle-long-wave infrared (Invited)

Gaoyou Liu; Disheng Wei; Yi Chen; Ke Yang; Shuyi Mi; Junhui Li; Chao Yang; Ruixue Wang; Xiaoming Duan; Tongyu Dai; Baoquan Yao; Youlun Ju; Yuezhu Wang

doi:10.3788/IRLA20201056

Crystal

Nonlinear coefficient/pm·V⁻¹

Transparency range/µm

Thermal conductivity/W·m⁻¹·K⁻¹

Damage threshold/MW·cm⁻²

ZnGeP₂

d₃₆=75

0.7-12

55.6 (1.064 µm, 10 ns)

BaGa₄Se₇

d₁₁=24.3 d₁₃=20.4

0.47-18

0.74∥a 0.64∥b 0.56∥c

557 (1.064 µm, 5 ns)

KTiOPO₄

d₁₅=1.9, d₂₄=3.6 d₃₃=16.9

0.35-4.0

2∥a 3∥b 3.3∥c

500 (1.064 µm, 10 ns)

PPKTP

d₃₃=16.8

0.28-4.5

2∥a 3∥b 3.3∥c

900 (1.064 µm, 5 ns)

KTiOAsO₄

d₁₅=4.2, d₂₄=2.8 d₃₃=16.2

0.35-5.2

1.8∥a 1.9∥b 2.1∥c

>500 (1.064 µm, 10 ns)

LiNbO₃

d₂₂=2.1, d₃₁=4.3, d₃₃=27.2

0.35-4.5

5.6

120 (1.064 µm, 10 ns)

PPLN

d₃₃=27.2

0.33-5.5

200 (1.064 µm, 10 ns)

MgO:PPLN

d₁₃=14.8

0.36-5

4.4

600 (1064 nm,9 ns)

AgGaS₂

d₃₆=12.6

0.47-13

1.4∥c 1.5⊥c

34 (1.064 µm, 15 ns)

AgGaSe₂

d₃₆=39.5

0.76-18

1.0∥c 1.1⊥c

13 (2.0 µm, 30 ns)

LiGaS₂

d₃₁=5.8

0.32-11.6

6~8

>240 (1.064 µm, 14 ns)

LiInSe₂

d₃₁=11.78

0.46-14

6.74∥x 8.54⊥z

40 (1.064 µm, 10 ns)

CdSe

d₃₁=18

0.75-25

6.9∥c 6.2⊥c

56 (2.09 µm, 46 ns)

GaSe

d₂₂=54

0.62-20

16.2

30 (1.064 µm, 10 ns)

CdSiP₂

d₃₆=84.5

0.52-9

13.6

41 (1.064 µm, 8 ns)

OP-GaP

d₁₄=70.6

0.5-12

110

>104 (2.09 µm, 12 ns)

OP-GaAs

d₁₄=94

0.86-18

>38 (2.09 µm, 50 ns)

Gaoyou Liu, Disheng Wei, Yi Chen, Ke Yang, Shuyi Mi, Junhui Li, Chao Yang, Ruixue Wang, Xiaoming Duan, Tongyu Dai, Baoquan Yao, Youlun Ju, Yuezhu Wang. Research progress of 2 μm Ho single-doped solid laser and application of ZnGeP₂ on middle-long-wave infrared (Invited)[J]. Infrared and Laser Engineering, 2020, 49(12): 20201056

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