Xumian QIAO, Xinhua LI, Maomao GU, Shulei GONG, Ziyan GONG, Chaoke WU, Chao WU, Leiming ZHAO. Investigation of deep‑level defects in wurtzite GaAs nanowire[J]. Chinese Journal of Quantum Electronics, 2024, 41(4): 671
- Chinese Journal of Quantum Electronics
- Vol. 41, Issue 4, 671 (2024)
Fig. 1. TEM image (a), high-resolution morphology (b), and diffraction pattern (c) of GaAs Nanowire
Fig. 2. (a) SEM morphology of GaAs NWs devices with two metal electrode terminals;(b) Typical photoconductance transient change of GaAs NWs
![Decay of the PPC at four representative temperature. [The hollow dots represent experimental data, and the continuous solid lines are the fitting results of the photocurrent attenuation using equation (1) ]](/Images/icon/loading.gif){kind=icon}
Fig. 3. Decay of the PPC at four representative temperature. [The hollow dots represent experimental data, and the continuous solid lines are the fitting results of the photocurrent attenuation using equation (1) ]
Fig. 4. Carrier dynamics model used to determine the dependence of defect concentration on illumination intensity
Fig. 5. Normalized photoionization cross-section variation with photon energy
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