Optical rectification in surface layers of germanium

Li Zhang; Fangye Li; Shuai Wang; Qi Wang; Kairan Luan; Xi Chen; Xiuhuan Liu; Lingying Qiu; Zhanguo Chen; Jihong Zhao; Lixin Hou; Yanjun Gao; Gang Jia

doi:10.3788/COL201816.102401

Journals >Chinese Optics Letters >Volume 16 >Issue 10 >Page 102401 > Article

Chinese Optics Letters
Vol. 16, Issue 10, 102401 (2018)

Optical rectification in surface layers of germanium

Li Zhang¹, Fangye Li¹, Shuai Wang¹, Qi Wang¹..., Kairan Luan¹, Xi Chen¹, Xiuhuan Liu², Lingying Qiu³, Zhanguo Chen^1,*, Jihong Zhao¹, Lixin Hou⁴, Yanjun Gao¹ and Gang Jia¹|Show fewer author(s)

Author Affiliations

¹State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China

²College of Communication Engineering, Jilin University, Changchun 130012, China

³State Key Laboratory of Supramolecular Structure and Materials, Institute of Theoretical Chemistry, Jilin University, Changchun 130012, China

⁴College of Information Technology, Jilin Agricultural University, Changchun 130118, China

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DOI: 10.3788/COL201816.102401 Cite this Article Set citation alerts

Li Zhang, Fangye Li, Shuai Wang, Qi Wang, Kairan Luan, Xi Chen, Xiuhuan Liu, Lingying Qiu, Zhanguo Chen, Jihong Zhao, Lixin Hou, Yanjun Gao, Gang Jia, "Optical rectification in surface layers of germanium," Chin. Opt. Lett. 16, 102401 (2018) Copy Citation Text

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Abstract

In this Letter, we have demonstrated significant electric field induced (EFI) optical rectification (OR) effects existing in the surface layers of germanium (Ge) and measured the distributions of EFI OR signals along the normal directions of surface layers of Ge samples. Based on the experimental results, the ratios of the two effective second-order susceptibility components

χ_{z z z}^{(2 eff)} / χ_{z x x}^{(2 eff)}

for Ge(001), Ge(110), and Ge(111) surface layers can be estimated to be about 0.92, 0.91, and 1.07, respectively. The results indicate that the EFI OR can be used for analyzing the properties on surface layers of Ge, which has potential applications in Ge photonics and optoelectronics.