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    Journals >Laser & Optoelectronics Progress >Volume 60 >Issue 13 >Page 1316019 > Article
    • Laser & Optoelectronics Progress
    • Vol. 60, Issue 13, 1316019 (2023)
    High-Performance van der Waals Heterotunneling Device Based on PdSe2/InSe
    Kexue Sun1,2,*, Jianglin Li1, Zefeng Chen3, Jianbin Xu4, and Qiang Zhao1
    Author Affiliations
  • 1College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, Jiangsu, China
  • 2Nation-Local Joint Project Engineering Laboratory of RF Integration & Micropackage, Nanjing 210023, Jiangsu, China
  • 3School of Optoelectronic Science and Engineering, Soochow University, Suzhou 215006, Jiangsu, China
  • 4Electronics Engineering Department, The Chinese University of Hong Kong, Hong Kong 999077, China
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    DOI: 10.3788/LOP230432 Cite this Article Set citation alerts
    Kexue Sun, Jianglin Li, Zefeng Chen, Jianbin Xu, Qiang Zhao. High-Performance van der Waals Heterotunneling Device Based on PdSe2/InSe[J]. Laser & Optoelectronics Progress, 2023, 60(13): 1316019 Copy Citation Text show less
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    Article index updated: Mar. 23, 2025
    The article is cited by 1 article(s) CLP online library. (Some content might be in Chinese.)
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    Kexue Sun, Jianglin Li, Zefeng Chen, Jianbin Xu, Qiang Zhao. High-Performance van der Waals Heterotunneling Device Based on PdSe2/InSe[J]. Laser & Optoelectronics Progress, 2023, 60(13): 1316019
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    Paper Information
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