12 W high power InGaAsP/AlGaInP 755 nm quantum well laser

H. Martin Hu; Jianyang Zhao; Weimin Wang; James Ho; Langxing Kuang; Wenbin Liu

doi:10.3788/COL201917.061403

Journals >Chinese Optics Letters >Volume 17 >Issue 6 >Page 061403 > Article

Chinese Optics Letters
Vol. 17, Issue 6, 061403 (2019)

12 W high power InGaAsP/AlGaInP 755 nm quantum well laser

H. Martin Hu^1,2, Jianyang Zhao³, Weimin Wang³, James Ho^1,2..., Langxing Kuang³ and Wenbin Liu^3,*|Show fewer author(s)

Author Affiliations

¹Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057, China

²Guangdong Provincial Key Laboratory of Optomechatronics, Shenzhen 518057, China

³Shenzhen Raybow Optoelectronics Co., Ltd., Shenzhen 518055, China

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DOI: 10.3788/COL201917.061403 Cite this Article Set citation alerts

H. Martin Hu, Jianyang Zhao, Weimin Wang, James Ho, Langxing Kuang, Wenbin Liu, "12 W high power InGaAsP/AlGaInP 755 nm quantum well laser," Chin. Opt. Lett. 17, 061403 (2019) Copy Citation Text

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H. Martin Hu, Jianyang Zhao, Weimin Wang, James Ho, Langxing Kuang, Wenbin Liu, "12 W high power InGaAsP/AlGaInP 755 nm quantum well laser," Chin. Opt. Lett. 17, 061403 (2019)

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