H. Martin Hu, Jianyang Zhao, Weimin Wang, James Ho, Langxing Kuang, Wenbin Liu, "12 W high power InGaAsP/AlGaInP 755 nm quantum well laser," Chin. Opt. Lett. 17, 061403 (2019)
- Chinese Optics Letters
- Vol. 17, Issue 6, 061403 (2019)
Fig. 1. Schematic epitaxial structure for product RB-755.
Fig. 2. (a) Calculated near-field distribution in the vertical direction, fundamental mode only. The confinement factor
Fig. 3. (a) P-I-V curves of product RB-755. (b) Spectrum of a single emitter in COS packaging under 11.5 A bias and 25°C. (c) Wall-plug efficiency of RB-755.
Fig. 4. Lifetime test with one single emitter under CW 12 A bias and 40°C.
Fig. 5. (a) Vertical (fast axis) far-field angular divergence. (b) Horizontal (slow axis) far-field angular divergence.
Fig. 6. Measured natural logarithm of threshold and slope efficiency as functions of absolute temperature. The slope of fitted lines corresponds to the inverse of
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