• Semiconductor Optoelectronics
  • Vol. 45, Issue 6, 887 (2024)
DING Peng, DENG Guangping, MA Huaping, HUANG Jian, and ZHONG Yujie
Author Affiliations
  • Chongqing Optoelectronics Research Institute, Chongqing 400060, CHN
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    DOI: 10.16818/j.issn1001-5868.2024072601 Cite this Article
    DING Peng, DENG Guangping, MA Huaping, HUANG Jian, ZHONG Yujie. Design of the 1 064 nm Silicon Single-Photon Avalanche Photodiode Module for Photon Detection[J]. Semiconductor Optoelectronics, 2024, 45(6): 887 Copy Citation Text show less
    References

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    [3] Schwartz D E, Charbon E, Shepard K L. A single-photon avalanche diode array for fluorescence lifetime imaging microscopy [J]. IEEE J. of of Solid-State Circuits, 2008, 43(11): 2546-2557.

    [4] Shawkat M S A, Habib M H U, McFarlane N. An analog CMOS silicon photomultiplier using perimeter-gated single-photon avalanche diodes [J]. IEEE Trans. on Circuits and Systems, 2018, 65(11): 3830-3841.

    [6] Bronzi D, Tisa S, Villa F, et al. Fast sensing and quenching of CMOS SPADs for minimal afterpulsing effects [J]. IEEE Photonics Technology Letters, 2013, 25(8): 776-779.

    [7] Acerbi F, Frera A D, Tosi A, et al. Fast active quenching circuit for reducing avalanche charge and afterpulsing in InGaAs/InP single-photon avalanche diode [J]. IEEE J. of Quantum Electron, 2013, 49(7): 563-569.

    DING Peng, DENG Guangping, MA Huaping, HUANG Jian, ZHONG Yujie. Design of the 1 064 nm Silicon Single-Photon Avalanche Photodiode Module for Photon Detection[J]. Semiconductor Optoelectronics, 2024, 45(6): 887
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