Fig. 1. Ferroelectric localized field-enhanced nanowire photodetectors. (a) Device structure schematic of ferroelectric side-gated single InP NW； (b) Working principle diagram of the device in the negative polarization state^[15]； (c) Device structure schematic of ferroelectric top-gated single InAs NW； (d) Output characteristic curves of the device for 3.5 μm exciting light at different power densities^[18]

Fig. 2. Ferroelectric localized field-enhanced MoS₂ photodetector. (a) Schematic diagram of MoS₂ top-gate device structure tuned by ferroelectric material； (b) Photoresponsivity under different wavelength^[14]； (c) Schematic diagram of structure and test circuit of MoS₂ negative capacitance field effect transistor tuned by ferroelectric material； (d) Transfer characteristic curves under different incident light powers^[23]

Fig. 3. Ferroelectric localized field-enhanced two-dimensional material photodetectors. (a) Structure schematic of ferroelectric material tuned InSe phototransistor^[26]； (b) Structure schematic of ferroelectric material tuned InSb phototransistor^[28]

Fig. 4. Modulation of two-dimensional material photodetectors by pyroelectric effect of ferroelectric materials. (a) Schematic diagram of graphene pyroelectric bolometer； (b) Working principle diagram of graphene pyroelectric bolometer^[29]； (c) P(VDF-TrFE)/MoS₂ field effect transistor structure^[30]； (d) Structure schematic of Bi₂O₂Se/PMN-PT ferroelectric field effect transistor^[31]

Fig. 5. Ferroelectric localized field-enhanced two-dimensional material homojunction devices. (a) Schematic diagram of BiFeO₃ ferroelectric tuned WSe₂ in-plane pn junction； (b) Output characteristics of the device^[32]； (c) Schematic diagram of P(VDF-TrFE) ferroelectric tuned MoTe₂ in-plane pn junction； (d) Photocurrent mapping of the device^[33]

Fig. 6. Ferroelectric localized field-enhanced two-dimensional van der Waals heterojunction devices^[35]. (a) Device structure schematic of ferroelectric tuned GeSe/MoS₂ heterojunction； (b)-(d) Schematic diagram of the energy band structure of the heterojunction corresponding to the different ferroelectric polarization states