A high energy 1 064 nm Q-switched laser was obtained by end pumping Nd:YAG crystal with a vertical array of semiconductor laser diodes (LD). According to the physical characteristics of linear change of LD wavelength with temperature, the wavelength of pump light deviated from absorption peak of Nd:YAG by adjusting the temperature of LD, and the gain of pumping end of laser medium was reduced, which effectively suppressed the self-excited oscillation restricting the output energy of Q-switched laser. 1 064 nm laser with a maximum output of 95 mJ was generated under pump energy of 530 mJ. The corresponding optical conversion efficiency was 18% and the Q-switching ratio of dynamic to static was 73%. The laser pulse width was 8 ns and divergence angle was 2.5 mrad.