The GaN thin film materials are widely used in light-emitting diode (LED), laser diode (LD) and other optoelectronic devices. But the preparation and application of GaN based device depends largely on its manufacturing cost. At present, because the single crystal sapphire crystal substrate has been merited, the GaN film are commonly deposited on the single crystal sapphire substrate to achieve the high quality GaN films. And because single crystal sapphire substrate is expensive, the GaN devices is limited to use. How to directly deposit high quality GaN films on the cheap substrate and which one meets the requirements of the device have becomed the research hotspot. Quartz glass is cheap as the substrate, but it is not crystal, and it is difficult to deposite high quality thin film samples on quartz glass substrate. In this study, the preparation of GaN thin film materials was prepared by using plasma enhanced metal organic chemical vapor deposition method to change the nitrogen reaction source under normal non-stereotyped quartz substrate at the low-temperature deposition. This research adopts the in-situ reflective high energy electron diffraction spectrum (RHEED), X-ray diffraction spectrum (XRD), Transmission Spectra at room temperature (Transmission Spectra) and room TPS to spectroscopy (PL) to analysis the as-grown GaN films. The results show that the as-grown GaN films show the excellent quality crystallization and optical performance under the proper N2 flux deposition parameters.