Halide perovskite possesses excellent photoelectric properties and can be prepared by low-temperature solution method. Photodetector arrays made of halide perovskite are highly required in the area of imaging, optical communication and other fields. However, halide perovskite can be easily dissolved by conventional solvents (including developer), which makes it incompatible with photolithography process. Herein, a novel method based on spin coating (the polar perovskite precursor solution only infiltratesthe hydrophilic pattern area) and low-temperature annealing has been proposed to prepare perovskite arrays, which can solve the problem of incompatibility between polar solvents and perovskite materials. The fabricated photodetector based on CH3NH3PbI3 thin film arrays exhibits good photoelectric performance, with a high detectivity of 4.7×1011Jones and the responsivity of 0.055 A/W under 530 nm light irradiation. This work provides a simple and effective strategy to prepare well-defined perovskite photodetector arrays based on thin film array.