Due to the low near-infrared absorption coefficient of silicon, there is a conflict between response speed and detection efficiency for conventional surface-illuminated silicon detectors. Thus they are thought to be not suitable for short-range optical fiber communication. Micro-/nanostructures have been widely used in solar cells, near-infrared enhanced detectors and other fields for their abilities to improve the absorption of incident light in absorption layers and the quantum efficiency of optoelectronic devices by multiplying optical path efficiently. Recently, CMOS compatible high-speed silicon detectors with a data transmission rate of higher than 20Gb/s have been achieved by applying photon-trapping microstructure. In this paper, the optimal design and preparation methods of micro-nano structures and high-speed silicon detectors based on micro-nano structure are reviewed and analyzed.