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    Journals >Opto-Electronic Engineering >Volume 33 >Issue 6 >Page 37 > Article
    • Opto-Electronic Engineering
    • Vol. 33, Issue 6, 37 (2006)
    Characters of ZrO2 films deposited by electron beam evaporation at different oxygen partial pressure
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Characters of ZrO2 films deposited by electron beam evaporation at different oxygen partial pressure[J]. Opto-Electronic Engineering, 2006, 33(6): 37 Copy Citation Text show less

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Characters of ZrO2 films deposited by electron beam evaporation at different oxygen partial pressure[J]. Opto-Electronic Engineering, 2006, 33(6): 37
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