Short wavelength infrared band (SWIR) as one of the "atmospheric windows", the detectors working in this wavelength range can receive more radiation energy from the target and gain higher sensitivity. In addition, SWIR detecting and imaging is based on the reflection imaging from the target similar to visible light, consequently it is typical of the distinct details resolution ability that medium and long wavelength infrared imaging lacks. With the wide application of SWIR detectors in military and civil area, higher requirements are put forward on the both performance and cost of SWIR detectors. InGaAs detectors is one of best choice as SWIR detectors since it has high sensitivity, high-speed response and low cost due to its quantum efficiency up to 70%-90% and high mobility close to 8000 cm²/(V·s) at room temperature. However, in order to further expand the wavelength, improve the imaging resolution, and reduce the cost, SWIR detectors based on new materials and new mechnism such as type-II superlattices、colloidal quantum dots and Si-based materials have been developed. This paper firstly summarized the advancement of InGaAs SWIR detectors from the main foreign and domestic research institutions including Sensors Unlimited Incorporation (SUI), FLIR, Teledyne Technologies, Teledyne Princeton Instruments of the United States, Sofradir and New Imaging Technologies (NIT) of France, Semiconductor Device (SCD) of Israel, Xenics of Belgium, etc. Then the new materials and new technology of SWIR detectors were introduced. Finally, the further development trendency of SWIR detectors was proposed.