Solar cells of p-CIS/n-buffer/ZnO type,where CIS is CuInS2,CuInSe2 or intermediates,are thin-film-based devices for the future high-efficiency and low-cost photovoltaic devices.As important thin film,the properties of Al-doped ZnO (AZO) directly affect the parameter of the cell,especially for large volume.In the present paper,AZO semiconductor transparent thin film on soda-lime glass was fabricated using cylindrical zinc-aluminum target,which can not only lower the cost of the target but also make the preparation of large area AZO thin film more easily.Using the DC magnet sputtering techniques and rolling target,high utilization efficiency of target was achieved and large area uniform and directional film was realized.An introduction to DC magnet sputtering techniques for large area film fabrication is given.With different measurement methods,such as X-ray diffraction (XRD) and scan electron microscope (SEM),we analyzed large size film’s structure,appearance,and electrical and optical characteristics.The XRD spectrum indicated that the AZO film shows well zinc-blende structure with a preferred (002) growth and the c-axis is oriented normal to the substrate plane.The lattice constant is 5.603 9 nm and the mismatch with CdS thin film is only 2 percent.It absolutely satisfied the demand of the CIGS solar cell.The cross-section of the AZO thin film indicates the columnar structure and the surface morphology shows that the crystal size is about 50 nm that is consistent with the result of XRD spectrum.By the optical transmission curve,not only the high transmission rate over 85 percent in the visible spectrum between 400 nm and 700 nm was showed but also the band gap 3.1 eV was estimated. And all these parameters can meet the demand of the large area module of CIGS solar cell.The result is that using alloy target and Ar gas,and controlling the appropriate pressure of oxygen,we can get directional,condensed,uniform,high transmitting rate,low resistance and large size (300 mm×300 mm) AZO film.