Han Xu, Kexue Sun, Rongqing Xu. Performance of Metal-Semiconductor-Metal Photodetector Based on LSPR Effect[J]. Laser & Optoelectronics Progress, 2025, 62(3): 0304001
- Laser & Optoelectronics Progress
- Vol. 62, Issue 3, 0304001 (2025)
Fig. 1. Schematic diagram of 3D simulation structure. (a) Periodic array of hexagonal gold nanowire; (b) schematic diagram of a single cycle interface
Fig. 2. Electric field intensity diagrams at the peak of absorption curve for devices with different GaAs thicknesses. (a) GaAs thickness is 10 nm; (b) GaAs thickness is 30 nm; (c) GaAs thickness is 50 nm
Fig. 3. Absorptivity curves of device under different thicknesses of ITO. (a) GaAs thickness of 10 nm; (b) GaAs thickness of 50 nm
Fig. 4. Variation in absorptivity of device with diameters of gold nanowire
Fig. 5. Variation in device absorptivity under different incidence angles in TE polarization state
Fig. 6. Variation in responsivity and photocurrent with bias voltage
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