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    Journals >Infrared and Laser Engineering >Volume 30 >Issue 3 >Page 226 > Article
    • Infrared and Laser Engineering
    • Vol. 30, Issue 3, 226 (2001)
    Study on measuring system for minority carrier lifetime
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    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study on measuring system for minority carrier lifetime[J]. Infrared and Laser Engineering, 2001, 30(3): 226 Copy Citation Text show less
    References

    [3] C NGUYEN VAN HUONG, Triboulet R, Lemasson P. Ag and Deposits on HgxTe (x=Cd,Zn) Alloys. J Cryst Growth, 1990, 101:311～317.

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study on measuring system for minority carrier lifetime[J]. Infrared and Laser Engineering, 2001, 30(3): 226
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