• Chinese Optics Letters
  • Vol. 23, Issue 3, 033602 (2025)
Guoliang Chen1, Houan Teng1, Jian Chen1, and Qiwen Zhan1,2,3,*
Author Affiliations
  • 1School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
  • 2Zhangjiang Laboratory, Shanghai 201204, China
  • 3International Institute for Sustainability with Knotted Chiral Meta Matter (WPI-SKCM2), Hiroshima University, Hiroshima 739-8526, Japan
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    DOI: 10.3788/COL202523.033602 Cite this Article Set citation alerts
    Guoliang Chen, Houan Teng, Jian Chen, Qiwen Zhan, "Fabrication of sub-diffraction limit high-aspect-ratio nanostructures via laser direct writing," Chin. Opt. Lett. 23, 033602 (2025) Copy Citation Text show less
    (a) Schematic diagram illustrating the optical path in the LDW system. L1, L2, lenses; HWP, half-wave plate; PBS, polarizing beam splitter; S, shutter; BS, beam splitter; G, Glan-Thompson prism; OL, objective lens. (b) Schematic diagram of photoresist placement. (c) Schematic diagram of the HARL processing method.
    Fig. 1. (a) Schematic diagram illustrating the optical path in the LDW system. L1, L2, lenses; HWP, half-wave plate; PBS, polarizing beam splitter; S, shutter; BS, beam splitter; G, Glan-Thompson prism; OL, objective lens. (b) Schematic diagram of photoresist placement. (c) Schematic diagram of the HARL processing method.
    Experimental results of the fabricated HARLs with different lengths. (a) IP-L780 photoresist. (b) IP-Dip photoresist. The top and side views of the HARLs are shown in the top and bottom halves of (a) and (b), respectively.
    Fig. 2. Experimental results of the fabricated HARLs with different lengths. (a) IP-L780 photoresist. (b) IP-Dip photoresist. The top and side views of the HARLs are shown in the top and bottom halves of (a) and (b), respectively.
    Experimental results of the fabricated HARLs with different pillar processing time. (a) 500 ms, (b) 700 ms, and (c) 900 ms.
    Fig. 3. Experimental results of the fabricated HARLs with different pillar processing time. (a) 500 ms, (b) 700 ms, and (c) 900 ms.
    Experimental results of the fabricated HARLs with different direct writing speeds. (a) 200 µm/s, (b) 400 µm/s, and (c) 500 µm/s.
    Fig. 4. Experimental results of the fabricated HARLs with different direct writing speeds. (a) 200 µm/s, (b) 400 µm/s, and (c) 500 µm/s.
    (a) Experimental results of the fabricated HARLs with high LDW power (16 mW). (b) Experimental results of the fabricated HARLs with 90° polarization states.
    Fig. 5. (a) Experimental results of the fabricated HARLs with high LDW power (16 mW). (b) Experimental results of the fabricated HARLs with 90° polarization states.
    Experimental results of the fabricated HAR array microstructure. (a) The isolated HAR cell microstructure. (b) The array of the HAR microstructures. (c) The top view of the HAR array microstructure. (d) The side view of the HAR array microstructure.
    Fig. 6. Experimental results of the fabricated HAR array microstructure. (a) The isolated HAR cell microstructure. (b) The array of the HAR microstructures. (c) The top view of the HAR array microstructure. (d) The side view of the HAR array microstructure.
    Guoliang Chen, Houan Teng, Jian Chen, Qiwen Zhan, "Fabrication of sub-diffraction limit high-aspect-ratio nanostructures via laser direct writing," Chin. Opt. Lett. 23, 033602 (2025)
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