The combination of a novel direct-transition GaInNAs and AlAs/GaAs distributed Bragg reflector with high reflectivity are making up of a GaAs-based long wavelength (1.3～1.6μm) vertical-cavity surface-emitting laser, and the device are becoming the essential element in optical communication, network, and data treatment. We reviewed the long wavelength GaIn-NAs vertical-cavity surface-emitting laser from selection of material, epitaxial technology, and overseas and domestic development of GaInNAs vertical-cavity surface-emitting laser.