2 μm GaSb-based high power semiconductor laser has a promising prospect in many fields, such as gas detection, medical cosmetology and laser processing. The structure development of 2 μm GaSb-based high power semiconductor laser based on power improvement was reviewed and discussed, the current research situation at home and abroad was introduced, and the principal technical issues in power and efficiency improvement were discussed. Two new structures introduced in traditional lasers in this field were introduced in detail, and their technical advantages were analyzed. It also pointed out the current 2 μm GaSb-based high power semiconductor lasers were facing bottlenecks, and their development trends were discussed.