Impulse response of Ge2Sb2Te5-based ultrafast photodetector integrated with SOI waveguide

Vibhu Srivastava; Prateek Mishra; Sunny

doi:10.3788/COL201917.100401

Journals >Chinese Optics Letters >Volume 17 >Issue 10 >Page 100401 > Article

Chinese Optics Letters
Vol. 17, Issue 10, 100401 (2019)

Impulse response of Ge₂Sb₂Te₅-based ultrafast photodetector integrated with SOI waveguide

Vibhu Srivastava, Prateek Mishra, and Sunny^*

Author Affiliations

Indian Institute of Information Technology-Allahabad, Prayagraj 211015, India

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DOI: 10.3788/COL201917.100401 Cite this Article Set citation alerts

Vibhu Srivastava, Prateek Mishra, Sunny, "Impulse response of Ge₂Sb₂Te₅-based ultrafast photodetector integrated with SOI waveguide," Chin. Opt. Lett. 17, 100401 (2019) Copy Citation Text

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Fig. 1. Proposed design for the impulse response analysis of the GST-based PD device.

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For the 150 nm thick cGST on 220 nm thick Si at the time of illumination: (a) potential distribution at 4 V, 2 V, and 0.5 V biasing, (b) electric field distribution for 2 V biasing.

Fig. 2. For the 150 nm thick

c GST

on 220 nm thick Si at the time of illumination: (a) potential distribution at 4 V, 2 V, and 0.5 V biasing, (b) electric field distribution for 2 V biasing.

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Fig. 3. Carrier current (

J_{c}

), displacement current (

J_{d}

), and total current (

J_{0}

) for a 150 nm thick

c GST

biased at 2 V illuminated at 1550 nm. The current component’s behavior is shown in the inset.

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Fig. 4.

J_{0}

for different thicknesses of

c GST

biased at 2 V for 1550 nm wavelength illumination with the responsivity of both phases of GST at different thicknesses under similar illumination and biasing conditions. The variation in responsivity with thickness at 1550 nm is shown in the inset.

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Fig. 5. Total current (

J_{0}

) for the 150 nm thick

a GST

and

c GST

biased at 2 V illuminated at 1550 nm.

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Fig. 6. Impulse response of device illuminated at wavelengths of 1150 nm, 1550 nm, and 1850 nm for a 2 V biased 150 nm thick (a)

c GST

and (b)

a GST

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	Responsivity (A/W)		BW (GHz)
Wavelength (nm)	$a GST$	$c GST$	$a GST$	$c GST$
1150	2	25	–	75
1550	18.5	21	8	29
1850	18	4	1.5	–

Table 1. Responsivity and Bandwidth Comparison of aGST and cGST

Vibhu Srivastava, Prateek Mishra, Sunny, "Impulse response of Ge₂Sb₂Te₅-based ultrafast photodetector integrated with SOI waveguide," Chin. Opt. Lett. 17, 100401 (2019)

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