New infrared devices prepared by InAs/GaSb superlattice materials have developed rapidly in the last decade. The paper carries out practical researches on mid-/short-wavelength dual-color infrared detector based on type-II InAs/GaSb superlattice. Firstly, a mid-/short-wavelength dual-color chip structure was designed based on two back-to-back n-i-p junctions. Then the PNP superlattice material with complete structure, smooth surface and low defect density was grown by molecular beam epitaxy. Finally, 320×256 focal plane arrays with excellent performance was fabricated and measured. The RA value of middle-wave channel reached 26 kΩ·cm2 and the short-wave channel reached 562 kΩ·cm2 at 77 K. The spectral response indicated the short-wave response band of 1.7-3 μm and the middle-wave of 3-5 μm. The middle-wave channel exhibits a detectivity value of 3.12×1011 cm·Hz1/2W-1, a photo-response non-uniformity of 9.9% and an effective pixel rate of 98.46%, while the short-wave channel exhibits a detectivity value of 1.34×1011 cm·Hz1/2W-1, a photo-response non-uniformity of 9.7% and an effective pixel rate of 98.06%.