Studies on Time-resolved Photoluminescence Spectrum of Wetting Layer and Quantum Dots in the Structure of Self-organized Quantum Dots

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Quantum Electronics >Volume 20 >Issue 2 >Page 208 > Article

Chinese Journal of Quantum Electronics
Vol. 20, Issue 2, 208 (2003)

Studies on Time-resolved Photoluminescence Spectrum of Wetting Layer and Quantum Dots in the Structure of Self-organized Quantum Dots

[in Chinese]^1,*, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, and [in Chinese]²

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¹[in Chinese]

²[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Studies on Time-resolved Photoluminescence Spectrum of Wetting Layer and Quantum Dots in the Structure of Self-organized Quantum Dots[J]. Chinese Journal of Quantum Electronics, 2003, 20(2): 208 Copy Citation Text

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Abstract

Single InAs layers (2 and 2.5 ML thick, respectively) were grown on (001) GaAs substrate by molecular-beam epitaxy (MBE). Formation of quantum dots was verified by atomic force microscopy (AFM). We studied and compared InAs quantum dots and wetting layer by photoluminescence and time-resolved spectrum. Migration of carriers among quantum dots and wetting layer were investigated, which explained our results well.

Keywords

InAs quantum dots time-resolved spectrum wetting layer

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