Comparing the coupling strength with both the mean and the product of the square roots of the respective damping rates for the bright and dark modes is a crucial metric in the study of plasmon-induced transparency (PIT). The flip in the ratio determines whether the coupling state between the structural units is strong or weak and also applies to the group delay. Our study explores two primary coupling channels within PIT structures: the inter-resonator distance (d) between the split-ring resonators (SRRs) and the cut wire (CW) and the spacing (g) between the SRRs. In the simulations, photosensitive silicon is embedded in the openings of the dark mode SRR resonator, actively modulating the dispersion characteristics and the coupling strength. Furthermore, we methodically examine the influence of these coupling channels on the transition between the coupling states, as well as on the maximal group delay in the PIT effect. Theoretically, leveraging the parameter fitting via the Lorentz coupling resonator model identifies the dominant parameters governing coupling state flips and differential regulation mechanisms. Our findings contribute to a deeper understanding of PIT phenomena and offer insights into optimizing PIT structures for diverse applications.