In order to apply the complex physical model of millimeter-wave noise of nano-MOSFET to engineering design, the expression of its compact model is studied. The complex noise physical model is simplified by transforming and analyzing the two-port correlation noise matrix of the device. The compact model proposed here not only expresses the non-quasi-static effect of the device with high precision, but also can be directly embedded into the ADS simulation design tool by Verilog-A language in the form of four nodes, thus ensuring the accuracy and greatly reducing the design complexity. The experimental results show that the proposed model is more accurate in both strong and weak inversion regions than the existing three-node model.