The latest research progress and mass production of SiGe BiCMOS technology in recent years have been reviewed. The device structure, process flow and performance reported by different institution are presented and discussed in detail. Moreover, the direction of further optimization of device and process is prospected. Although traditional DPSA-SEG architecture has achieved the best mass production performance, it is difficult to further improve its device performance due to the high base link resistance and the inhomogeneity of selective epitaxial base film. NSEG has achieved very high performance in the laboratory, but its low self-alignment degrees hinder industrial mass production and larger-scale integration. It is becoming more and more difficult to maintain the process compatibility of HBT devices with smaller baseline CMOS. It remains a difficult challenge to work out solutions that combine high performance, mass production, and low cost.