[2] HASKINS C, WINSLOW T, RAMAN S. FET diode linearizer optimization for amplifier predistortion in digital radios ［J］. IEEE Microwave Guided Wave Letter, 2000, 10(1): 21-23.
[3] AITCHISON C, MBSBELE M, MOAZZAM M, et al. Improvement of third-order intermodulation product of RF and microwave amplifiers by injection ［J］. IEEE Transaction on Microwave Theory and Technology, 2001, 49(6): 1148-1154.
[4] FAN W, CHENG K. Theoretical and experimental study of amplifier linearization based on harmonic and baseband signal injection technique ［J］. IEEE Transaction on Microwave Theory and Technology, 2002, 50(7): 1801-1806.
[6] BAHL I, DUAHAM A. High third-order-intercept series-FET driver power amplifier ［J］. IEEE Microwave Magazine, 2009, 10(5): 114-118.
[7] KIM M, OKI A, GORMAN G, et al. GaAs heterojunction bipolar transistor device and IC technology for high-performance analog and microwave applications ［J］. IEEE Transaction on Microwave Theory and Technology, 1989, 37(9): 1286-1303.
[10] WANG N, HO W, HIGGINS J. AlGaAs/GaAs HBT linearity characteristics ［J］. IEEE Transaction on Microwave Theory and Technology, 1994, 42(10): 1845-1850.
[11] KOBAYASHI K. High linearity-wideband PHEMT Darlington amplifier with +40 dBm IP3 ［C］ // 2006 Asia-Pacific Microwave Conference. Yokohama, Japan. 2006: 62-64.
