• High Power Laser and Particle Beams
  • Vol. 36, Issue 1, 013001 (2024)
Shuai Zhang1,2, Yibo Zhang2, and Min Tu2
Author Affiliations
  • 1School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, China
  • 2Key Laboratory of Advanced Science and Technology on High Power Microwave, Northwest Institute of Nuclear Technology, Xi’an 710024 China
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    DOI: 10.11884/HPLPB202436.230304 Cite this Article
    Shuai Zhang, Yibo Zhang, Min Tu. Brief analysis of research trends of high power microwave effect in the United States[J]. High Power Laser and Particle Beams, 2024, 36(1): 013001 Copy Citation Text show less
    HPM radiation incident upon a target can couple into the target via front door and back door pathways and cause effects on internal electronics within the target structure [6]
    Fig. 1. HPM radiation incident upon a target can couple into the target via front door and back door pathways and cause effects on internal electronics within the target structure [6]
    Introduction of US Air Force Research Laboratory high power microwave effect research [7]
    Fig. 2. Introduction of US Air Force Research Laboratory high power microwave effect research [7]
    front door coupling pathsback door coupling paths
    ➢ HPM field couples to antennas ➢ in-band HPM energy at receiver➢ vulnerable components: low noise amplifiers (LNAs), limiters➢ effect is generally damage➢ can achieve EW-like effects with upset➢ control/guidance systems involve digital electronics➢ HPM field couples to control wires (e.g. UAS), internal cables (e.g. missile)➢ effect typically disruption of digital electronics
    Table 1. Expanded effects understanding in counter-UAS and counter-missile
    Shuai Zhang, Yibo Zhang, Min Tu. Brief analysis of research trends of high power microwave effect in the United States[J]. High Power Laser and Particle Beams, 2024, 36(1): 013001
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