Tiantian Jia, Hailiang Dong, Zhigang Jia, Aiqin Zhang, Jian Liang, Bingshe Xu. Influence of indium composition of n waveguide layer on photoelectric performance of GaN-based green laser diode[J]. Infrared and Laser Engineering, 2021, 50(10): 20200489
- Infrared and Laser Engineering
- Vol. 50, Issue 10, 20200489 (2021)
Fig. 1. Epitaxial structure of the InGaN-based green laser diode
Fig. 2. Refractive index of Inx Ga1-x N with x composition 0.04-0.08 at the wavelength of 525 nm
Fig. 3. Refractive index profiles and intensity distributions of TE-modes versus the different n-Inx Ga1−x N waveguide indium content ((b) is the magnification of (a) from 550 nm to 1050 nm)
Fig. 4. Optical loss outside multiple quantum wells ( α out) (a), optical loss in multiple quantum wells (α QW) (b) and total optical loss (α Total) (c) of laser diode versus the injected current for different n-Inx Ga1−x N waveguide indium content (The arrow indicates 0.5 A or 6 kA/cm2)
Fig. 5. Leakage current density (a), injection efficiency (b) and IQE (c) of laser diode versus the injected current for different n-Inx Ga1−x N waveguide indium content
Fig. 6. Band energy versus of different n-Inx Ga1−x N waveguide indium contents at injection current 0.5 A (Injection density is 6 kA/cm2）
Fig. 6. [in Chinese]
Fig. 7. Curves of nonradiative current density (a), SRH current density (b), Auger current density (c) and active region carrier concentration (d) versus injected current at different indium components of n-Inx Ga1−x N waveguide layers
Fig. 8. Threshold current (a) and voltage (b) of laser diode with n-Inx Ga1−x N waveguide indium contents versus injected current
Fig. 9. Simulated power (a) and conversion efficiency (b) of laser diode with n-Inx Ga1−x N waveguide indium contents versus injected current
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Table 1. Structural parameters of InGaN-based green laser diode
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