Electronic and optical properties of an intrinsic type-I band alignment ZrS2/SnS2 van der Waals heterostructure for optoelectronic devices

Jimin Shang; Shuai Zhang; Yongqiang Wang; Hongyu Wen; Zhongming Wei

doi:10.3788/COL201917.020010

Journals >Chinese Optics Letters >Volume 17 >Issue 2 >Page 020010 > Article

Chinese Optics Letters
Vol. 17, Issue 2, 020010 (2019)

Electronic and optical properties of an intrinsic type-I band alignment ZrS₂/SnS₂ van der Waals heterostructure for optoelectronic devices

Jimin Shang¹, Shuai Zhang², Yongqiang Wang¹, Hongyu Wen^3,*, and Zhongming Wei³

Author Affiliations

¹School of Physics and Electronics Engineering, Zhengzhou University of Light Industry, Zhengzhou 453002, China

²College of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, China

³State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100083, China

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DOI: 10.3788/COL201917.020010 Cite this Article Set citation alerts

Jimin Shang, Shuai Zhang, Yongqiang Wang, Hongyu Wen, Zhongming Wei, "Electronic and optical properties of an intrinsic type-I band alignment ZrS₂/SnS₂ van der Waals heterostructure for optoelectronic devices," Chin. Opt. Lett. 17, 020010 (2019) Copy Citation Text

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Abstract

The electronic and optical properties of the ZrS₂/SnS₂ van der Waals heterostructure have been investigated. We find out that the formed heterostructure has an intrinsic type-I band alignment. Moreover, the characteristics of optical absorption in the heterostructure can be enhanced to the amount of 10⁶ in the ultraviolet light region. In addition, the tuning electronic properties of ZrS₂/SnS₂ heterostructure are very interesting, due to the transitions from type-I to type-II band alignment that can occur by applying an external electric field. These results suggest that the atomically thin materials ZrS₂/SnS₂ heterostructure will be utilized for flexible optoelectronic applications.